Programmable Schmitt trigger circuit based on memristor

Zelong Liu, Tong Li, Huan‐huan Ding, Ziwei Feng
{"title":"Programmable Schmitt trigger circuit based on memristor","authors":"Zelong Liu, Tong Li, Huan‐huan Ding, Ziwei Feng","doi":"10.1117/12.2682307","DOIUrl":null,"url":null,"abstract":"Because the memristor is a kind of nonlinear resistance, its resistance coefficient depends on the total charge q flowing through the element, that is, the output voltage of the memristor to the past time integral determines the resistance value of the device, according to this feature of the element can make the resistance value of the memristor realize programmable calculation, and then improve the performance of the circuit parameters. In this paper, we design a programmable memristor circuit by using a bipolar threshold memristor to realize the adjustable resistance value in the circuit, and apply it to the Schmidt trigger circuit. Through the memristor programming circuit to change the threshold setting voltage value of the Schmidt trigger, to achieve the controllable range of the back error, so as to achieve a better waveform integration effect.","PeriodicalId":440430,"journal":{"name":"International Conference on Electronic Technology and Information Science","volume":"211 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2023-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Conference on Electronic Technology and Information Science","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1117/12.2682307","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

Abstract

Because the memristor is a kind of nonlinear resistance, its resistance coefficient depends on the total charge q flowing through the element, that is, the output voltage of the memristor to the past time integral determines the resistance value of the device, according to this feature of the element can make the resistance value of the memristor realize programmable calculation, and then improve the performance of the circuit parameters. In this paper, we design a programmable memristor circuit by using a bipolar threshold memristor to realize the adjustable resistance value in the circuit, and apply it to the Schmidt trigger circuit. Through the memristor programming circuit to change the threshold setting voltage value of the Schmidt trigger, to achieve the controllable range of the back error, so as to achieve a better waveform integration effect.
基于忆阻器的可编程施密特触发电路
由于忆阻器是一种非线性电阻,其电阻系数取决于流经元件的总电荷q,即忆阻器的输出电压对过去时间的积分决定了器件的电阻值,根据元件的这一特点可以使忆阻器的电阻值实现可编程计算,进而提高电路参数的性能。本文利用双极阈值忆阻器设计了一种可编程忆阻电路,实现了电路中电阻值的可调,并将其应用于施密特触发电路。通过忆阻器编程电路来改变施密特触发器的阈值设定电压值,从而实现反向误差的可控范围,从而达到更好的波形积分效果。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信