A 0.5 um Flash Technology suitable for Low Voltage Embedded Applications

Abstract

High density, low supply voltage, low power consumption and fast program/erase flash memory are important in data storage for applications in portable electronic products. In this paper we present a 0.5 um low voltage flash technology embedded in a standard 0.5 um Ti-salicide logic process. Stacked gate flash memory cell is chosen and both programming and erase are done through by bi-directional Fowler-Nordheim tunneling. Single cell programming and erasing times are 5ms and 10ms, respectively. With page mode programming, a programming time of 5us per bit are achieved. The single cell endurance is better than 10 cycles.