Millimeter-Wave Band CMOS RF Phased-Array Transceiver IC Designs for 5G Applications

H. Park, D. Kang, J. Lee, D. Minn, Y. Aoki, K. Kim, S. Lee, D. Lee, S. Kim, J. Kim, W. Lee, C. Kim, S. Park, J. Park, B. Suh, J. Jang, M. Kim, K. Min, S. Jeon, A.-S. Ryu, Y. Kim, J. Lee, J. Son, S.-G. Yang
{"title":"Millimeter-Wave Band CMOS RF Phased-Array Transceiver IC Designs for 5G Applications","authors":"H. Park, D. Kang, J. Lee, D. Minn, Y. Aoki, K. Kim, S. Lee, D. Lee, S. Kim, J. Kim, W. Lee, C. Kim, S. Park, J. Park, B. Suh, J. Jang, M. Kim, K. Min, S. Jeon, A.-S. Ryu, Y. Kim, J. Lee, J. Son, S.-G. Yang","doi":"10.1109/IEDM13553.2020.9371948","DOIUrl":null,"url":null,"abstract":"This paper presents design challenges and solutions for the fifth generation (5G) phased-array transceiver ICs in millimeter-wave (MMW) frequency bands. A 28nm bulk CMOS device technology is selected to integrate multiple RF phased-array elements in a single-chip to achieve a high-level of TX EIRP and RX sensitivity. Several design approaches of gain, POUT, stability, reliability and linearity enhancement techniques are applied to enable CMOS as a key device solution for 5G applications in MMW frequency bands. A 39GHz band 16-channel CMOS RF phased-array transceiver IC is designed and can support 4T/4R MIMO base-station applications including ×64 RF phased-array ICs (total 1,024 phased-array elements). T/RX paths have gain dynamic ranges of >30/40dB for flexibility and scalability. The TX path shows POUT/Ch. of >6.0dBm at EVM of -34dB (800MHz) and PDC/Ch. of 105mW. The RX path performs NF of 4.2dB, EVM of -38dB (100MHz) and PDC/Ch. of 39mW. These state-of-the-art results lead to TX EIRP of >55dBm and RX sensitivity of <-113dBm/100MHz in the 5G NR base-station system.","PeriodicalId":415186,"journal":{"name":"2020 IEEE International Electron Devices Meeting (IEDM)","volume":"35 15 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2020-12-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 IEEE International Electron Devices Meeting (IEDM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM13553.2020.9371948","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 7

Abstract

This paper presents design challenges and solutions for the fifth generation (5G) phased-array transceiver ICs in millimeter-wave (MMW) frequency bands. A 28nm bulk CMOS device technology is selected to integrate multiple RF phased-array elements in a single-chip to achieve a high-level of TX EIRP and RX sensitivity. Several design approaches of gain, POUT, stability, reliability and linearity enhancement techniques are applied to enable CMOS as a key device solution for 5G applications in MMW frequency bands. A 39GHz band 16-channel CMOS RF phased-array transceiver IC is designed and can support 4T/4R MIMO base-station applications including ×64 RF phased-array ICs (total 1,024 phased-array elements). T/RX paths have gain dynamic ranges of >30/40dB for flexibility and scalability. The TX path shows POUT/Ch. of >6.0dBm at EVM of -34dB (800MHz) and PDC/Ch. of 105mW. The RX path performs NF of 4.2dB, EVM of -38dB (100MHz) and PDC/Ch. of 39mW. These state-of-the-art results lead to TX EIRP of >55dBm and RX sensitivity of <-113dBm/100MHz in the 5G NR base-station system.
5G毫米波波段CMOS射频相控阵收发器IC设计
本文介绍了毫米波(MMW)频段第五代(5G)相控阵收发器ic的设计挑战和解决方案。采用28nm体CMOS器件技术,将多个射频相控阵元件集成在单芯片中,以实现高水平的TX EIRP和RX灵敏度。采用增益、POUT、稳定性、可靠性和线性度增强技术等多种设计方法,使CMOS成为毫米波频段5G应用的关键器件解决方案。设计了一款39GHz频段16通道CMOS RF相控阵收发器IC,可支持4T/4R MIMO基站应用,包括×64 RF相控阵IC(共1,024个相控阵元件)。T/RX路径具有>30/40dB的增益动态范围,具有灵活性和可扩展性。TX路径显示POUT/Ch。在EVM为-34dB (800MHz)和PDC/Ch时,>6.0dBm。105兆瓦。RX路径的NF为4.2dB, EVM为-38dB (100MHz), PDC/Ch。39兆瓦。这些最先进的结果导致5G NR基站系统的TX EIRP >55dBm, RX灵敏度<-113dBm/100MHz。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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