An integrated silicon photonics technology for O-band datacom

N. Feilchenfeld, F. G. Anderson, T. Barwicz, S. Chilstedt, Y. Ding, J. Ellis-Monaghan, D. Gill, C. Hedges, J. Hofrichter, F. Horst, M. Khater, E. Kiewra, R. Leidy, Y. Martin, K. McLean, M. Nicewicz, J. Orcutt, B. Porth, J. Proesel, C. Reinholm, J. Rosenberg, W. Sacher, A. Stricker, C. Whiting, C. Xiong, A. Agrawal, F. Baker, C. Baks, B. Cucci, D. Dang, T. Doan, F. Doany, S. Engelmann, M. Gordon, E. Joseph, J. Maling, S. Shank, X. Tian, C. Willets, J. Ferrario, M. Meghelli, F. Libsch, B. Offrein, W. Green, W. Haensch
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引用次数: 46

Abstract

A manufacturable platform of CMOS, RF and opto-electronic devices fully PDK enabled to demonstrate a 4×25 Gb/s reference design is presented. With self-aligned fiber attach, this technology enables low-cost O-band data-com transceivers. In addition, this technology can offer enhanced performance and yield in hybrid-assembly for applications at 25 Gbaud and beyond.
用于o波段数据通信的集成硅光子学技术
提出了一个完全PDK支持的CMOS、RF和光电器件的可制造平台,用于演示4×25 Gb/s参考设计。通过自对准光纤连接,该技术可以实现低成本的o波段数据通信收发器。此外,该技术还可以为25 Gbaud及以上的应用提供更高的混合装配性能和产量。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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