A Charge Pump Based 1.5A NMOS LDO with 1.0~6.5V Input Range and 110mV Dropout Voltage

Abstract

This paper presents a low dropout regulator (LDO) with ampere-level loading capability and wide input range. The NMOS power transistor with built-in charge pump was adopted to reduce the dropout voltage thus increase the power efficiency effectively. To realize a wide input voltage range, the fully-integrated charge pump can be configured adaptively for different input voltage. The proposed LDO has been designed and implemented in a 180nm CMOS technology. Experimental results show that the LDO has a wide input voltage range of 1.0~6.5 V, a wide output voltage range of 0.8~5.5 V, and a maximum output current of 1.5 A. In addition, the dropout voltage is only 110 mV under 1.5 A loading condition.