S. H. Han, J. Lee, H. Shin, J. Lee, K. Suh, K. Nam, B. Kwon, M. Cho, J. Lee, J. Jeong, J. Park, S. C. Oh, S. O. Park, S. Hwang, S. Pyo, H. Jung, Y. Ji, J. Bak, D. S. Kim, W. S. Ham, Y. Kim, K. Lee, Y. J. Song, G. Koh, Y. Hong, G. Jeong
{"title":"28-nm 0.08 mm2/Mb Embedded MRAM for Frame Buffer Memory","authors":"S. H. Han, J. Lee, H. Shin, J. Lee, K. Suh, K. Nam, B. Kwon, M. Cho, J. Lee, J. Jeong, J. Park, S. C. Oh, S. O. Park, S. Hwang, S. Pyo, H. Jung, Y. Ji, J. Bak, D. S. Kim, W. S. Ham, Y. Kim, K. Lee, Y. J. Song, G. Koh, Y. Hong, G. Jeong","doi":"10.1109/IEDM13553.2020.9372040","DOIUrl":null,"url":null,"abstract":"We present the world-first demonstration of 28-nm embedded MRAM (eMRAM) for frame buffer memory, highlighting the smallest macro size (0.08 mm2/Mb) reported to date. Compared to SRAM that is commonly used for frame buffer memory, eMRAM provides 47% area saving. For frame buffer applications, read disturbance and endurance are the most critical reliability considerations. With magnetic tunnel junction process improvements, we have verified sufficient read disturbance margins and met the endurance requirement (> 1E10 cycles) which corresponds to 10-year continuous usage. Compared to flash-type eMRAM, we have achieved 40% switching current reduction with < 50ns read/write speed.","PeriodicalId":415186,"journal":{"name":"2020 IEEE International Electron Devices Meeting (IEDM)","volume":"7 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2020-12-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"12","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 IEEE International Electron Devices Meeting (IEDM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM13553.2020.9372040","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 12
Abstract
We present the world-first demonstration of 28-nm embedded MRAM (eMRAM) for frame buffer memory, highlighting the smallest macro size (0.08 mm2/Mb) reported to date. Compared to SRAM that is commonly used for frame buffer memory, eMRAM provides 47% area saving. For frame buffer applications, read disturbance and endurance are the most critical reliability considerations. With magnetic tunnel junction process improvements, we have verified sufficient read disturbance margins and met the endurance requirement (> 1E10 cycles) which corresponds to 10-year continuous usage. Compared to flash-type eMRAM, we have achieved 40% switching current reduction with < 50ns read/write speed.
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