Floorplan and congestion aware framework for optimal SRAM selection for memory subsystems

Gaurav Narang, Alexander Fell, P. Gupta, Anuj Grover
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引用次数: 2

Abstract

Embedded memories are the key contributor to the chip area, dynamic power dissipation and also form a significant part of critical path for high performance advanced SoCs. Therefore, optimal selection of memory instances becomes imperative for SoC designers. While EDA tools have evolved over the past years to optimally select standard logic cells depending on the timing and the power constraints, optimal memory selection is largely a manual process. We propose a framework to optimize power, performance, and area (PPA) of a memory subsystem (MSS) by including floorplan dependent delays and power consumption in interconnects and glue logic of the MSS in the pre-RTL stage. Through this framework, we demonstrate that for a 4 Mb assembly of SRAM instances, dynamic power is reduced by 44%, area by 49%, and leakage by 71% with the floorplan aware selection. The framework has the capability to use different estimates, when routing congestion is important (for example, in low cost processes with less number of metal layers). We also show that the interconnect delays are reduced by about 68% and dynamic power by 58%, if additional metal layers are available for routing compared to a low cost 6 metal process.
内存子系统最佳SRAM选择的平面图和拥塞感知框架
嵌入式存储器是芯片面积、动态功耗的关键贡献者,也是高性能先进soc关键路径的重要组成部分。因此,对于SoC设计人员来说,最佳选择内存实例变得至关重要。虽然EDA工具在过去的几年里已经发展到根据时间和功率限制来最佳地选择标准逻辑单元,但最佳内存选择主要是一个手动过程。我们提出了一个框架来优化内存子系统(MSS)的功率、性能和面积(PPA),该框架包括平面图相关的延迟和互连中的功耗,以及MSS在预rtl阶段的粘合逻辑。通过这个框架,我们证明了对于一个4mb的SRAM实例组件,在平面感知选择下,动态功率减少44%,面积减少49%,泄漏减少71%。当路由拥塞很重要时(例如,在具有较少金属层的低成本流程中),框架具有使用不同估计的能力。我们还表明,与低成本的6金属工艺相比,如果额外的金属层可用于路由,则互连延迟减少了约68%,动态功率减少了58%。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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