Optical testing of submicron-technology MOSFETs and bipolar transistors

Abstract

A noninvasive infrared laser interferometric technique is used to analyse 0.1 m-test-technology NMOSFETs and 0.5μm-technology bipolar junction transistors and PMOSFETs. Optical signals arising from free carrierand temperature-induced modulation of the laser beam are studied as a function of bias conditions, device operation frequency and lateral distance from the device. The experiments are found to be in good agreement with results of optical and thermal simulations.