The Effect of Heat Treatment on Compensated CZ Silicon

April 16 Pub Date : 1984-04-16 DOI:10.1002/PSSA.2210820225

P. Baranskii, V. Babich, N. P. Baran, A. Bugay, Yu. P. Dotsenko, V. Kovalchuk

引用次数: 5

Abstract

Thermally induced donors in Czochralski-grown p-Si crystals are investigated by both EPR and Hall techniques. The results confirm that thermally induced donors are double donors. A model to account for paramagnetic properties of thermal donors is proposed. [Russian Text Ignored].

查看原文本刊更多论文

热处理对补偿CZ硅的影响

用EPR和Hall技术研究了chzochralski生长p-Si晶体中的热诱导供体。结果证实热诱导供体是双供体。提出了一个计算热供体顺磁性的模型。[忽略俄语文本]。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文求助全文

来源期刊

April 16

自引率

0.00%

发文量