The evaluation of copper migration during the die attach curing and second wire bonding process

52nd Electronic Components and Technology Conference 2002. (Cat. No.02CH37345) Pub Date : 2002-08-07 DOI:10.1109/ECTC.2002.1008319

T.Y. Lin, K. Davison, W. Leong, S. Chua, J. S. Pan, J. Chai, K. Toh, W. C. Tjiu

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引用次数: 2

Abstract

The copper migration on the silver plated surface of the lead-frames with various heat treatments was evaluated by X-ray photoelectron spectroscopy (XPS), transmission electron microscopy (TEM) and atomic force microscopy (AFM) methodologies. The copper migration may introduce copper oxidation and result in the wedge bonding failures due to the non-stick on lead (NSOL). The experiment was performed on the two kinds of TQFP leadframes with the stamped and etched manufacturing processes. XPS results showed that the etched leadframe was the relatively better one in that less copper oxide was detected on silver surface after annealing process. However, more copper was clearly observed to diffuse onto the silver surface after annealing process in the stamped leadframe. In comparison between the stamped and etched lead-frames, the silver plated layer in latter more efficiently blocks the copper diffusion - either surface or bulk diffusion. In addition, TEM and AFM provided the additional insight of the grain structure and surface roughness measurement of silver.

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模接固化和二次焊丝过程中铜迁移的评价

采用x射线光电子能谱(XPS)、透射电子显微镜(TEM)和原子力显微镜(AFM)等方法研究了不同热处理方式下铅架镀银表面铜的迁移情况。铜的迁移可能导致铜氧化，并由于铅不粘接而导致楔接失效。采用冲压和蚀刻两种制造工艺对两种TQFP引线框进行了实验研究。XPS结果表明，经退火处理后，镀银表面的氧化铜含量较低，是较好的镀银引线框架。然而，在冲压引线框退火处理后，明显观察到更多的铜扩散到银表面。在冲压和蚀刻铅框的比较中，后者的镀银层更有效地阻止了铜的扩散——无论是表面扩散还是整体扩散。此外，TEM和AFM为银的晶粒结构和表面粗糙度测量提供了额外的见解。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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52nd Electronic Components and Technology Conference 2002. (Cat. No.02CH37345)

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