Photon Synthesis of Nanometric Films Based on Transitional Metal oxides for Multi-Parameter Sensors

ALT Proceedings Pub Date : 2012-11-01 DOI:10.12684/ALT.1.55
S. Mulenko, A. Luches, A. Caricato, D. Valerini
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Abstract

The reactive pulsed laser deposition (RPLD) based on a KrF laser was used for photon synthesis of nanometric iron and chromium oxides films. RPLD allows controlling the thickness and stoichiometry of deposits with definite band gap. So RPLD was used for synthesizing nanometric iron and chromium oxides films for thermo-photo-chemical sensors. We compared sensing properties of iron and chromium oxides nanometric films deposited on <100>Si substrate by RPLD. These iron and chromium oxides films have semiconductor properties with the band gaps less than 1.0 eV. The largest photosensitivity of iron and chromium oxides films was about 44 Vc/W and 2.5 Vc/W, accordingly, for white light at power density ~ 6x10-3 W/cm2. Vc is “chemical” photo e.m.f.. Maximum value of thermo electromotive force (e.m.f.) coefficient of iron and chromium oxides films was about 1.65 mV/K and 3.5-4.5mV/K, accordingly. Iron oxides films were tested as chemical sensors: the largest sensitivity of NO molecules was at the level of 7x1012 cm-3. Our results showed that nanometric iron and chromium oxides films synthesized by UV photons can be used as up-to-date materials for multi-parameter sensors operating at moderate temperature.
多参数传感器用过渡金属氧化物纳米薄膜的光子合成
采用基于KrF激光器的反应性脉冲激光沉积(RPLD)技术制备了纳米级铁铬氧化物薄膜。RPLD允许控制具有一定带隙的沉积物的厚度和化学计量。因此,RPLD被用于合成用于热光化学传感器的纳米氧化铁和氧化铬薄膜。比较了用RPLD沉积在Si衬底上的铁和铬氧化物纳米膜的传感性能。这些铁和铬氧化物薄膜具有半导体性质,带隙小于1.0 eV。在功率密度为6x10- 3w /cm2的白光下,氧化铁和氧化铬薄膜的最大光敏度分别为44 Vc/W和2.5 Vc/W。Vc是“化学”照片。铁和铬氧化物膜的热电动势系数最大值分别为1.65 mV/K和3.5 ~ 4.5mV/K。氧化铁薄膜作为化学传感器进行测试:NO分子的最大灵敏度在7x1012cm -3水平。我们的研究结果表明,紫外光子合成的纳米氧化铁和氧化铬薄膜可以作为在中等温度下工作的多参数传感器的最新材料。
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