Takashi Sato, M. Shirao, Y. Takino, N. Sato, N. Nishiyama, S. Arai
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Abstract
A first room-temperature pulsed operation of a 1.3-μm wavelength npn AlGaInAs/InP transistor laser was achieved with a threshold emitter current and current gain of 130 mA and 1, respectively.
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