Structure Analysis of ZnS-SiO2 Thin Film and Patterning by Heat-Mode Lithography

Abstract

A tetrahedral network structure like ZnS crystal is found to exist in the amorphous ZnS-SiO2 thin film. It is considered that the etching selectivity in as-deposited and annealed ZnS-SiO2 thin film becomes large due to the growth of ZnS crystals by annealing. There is optimum mixture rate of ZnS for patterning of Zns-SiO2 thin film by the heat-mode lithography, and the ZnS-SiO2 dots with clear and smooth edges were formed with increasing in the ZnS mixture rate to 80%