High Gain At Low Power in InGaAsP Double-Heterostructure Bipolar Transistors

Abstract

The integration of photonic devices (diode lasers, photodiodes) with electronic gain elements (transistors) is particularly interesting on InP. The band-gap of InGaAsP in this system is compatible with the commonly used 1300nm and 1550nm optical transmission wavelengths, a semi-insulating substrate is available for inter-device electrical isolation and multi-layer processing is easily controlled with accessible materialselective wet chemical etchants.