Current and Voltage Hybrid Source Gate Driver for Maximizing the Switching Capability of SiC MOSFETs

Abstract

A current/voltage hybrid source gate driver (HGD) has been newly developed to achieve high-speed switching (SW) with no gate overdrive. The HGD is applied to drive SiC MOSFETs in an inductive-load buck converter. The driver successfully reduces the SW transient time and power loss by 18%-43%, depending on operation conditions.