{"title":"20.2 A variable-conversion-ratio 3-phase resonant switched capacitor converter with 85% efficiency at 0.91W/mm2 using 1.1nH PCB-trace inductors","authors":"C. Schaef, K. Kesarwani, J. Stauth","doi":"10.1109/ISSCC.2015.7063075","DOIUrl":null,"url":null,"abstract":"Switched-capacitor (SC) converters have shown significant promise for monolithic integration in a variety of mobile computing applications due to the relatively high energy-densities of modern capacitor technologies and the emergence of deep-trench technology [1-4]. Compared to more traditional buck and boost topologies, the SC approach provides better utilization of active and passive components, and is especially favorable when using submicron or deep-submicron CMOS technology because low-voltage devices can be configured in cascaded or hierarchical structures to interface across wide conversion ratios [5].","PeriodicalId":188403,"journal":{"name":"2015 IEEE International Solid-State Circuits Conference - (ISSCC) Digest of Technical Papers","volume":"29 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-03-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"59","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 IEEE International Solid-State Circuits Conference - (ISSCC) Digest of Technical Papers","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISSCC.2015.7063075","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 59
Abstract
Switched-capacitor (SC) converters have shown significant promise for monolithic integration in a variety of mobile computing applications due to the relatively high energy-densities of modern capacitor technologies and the emergence of deep-trench technology [1-4]. Compared to more traditional buck and boost topologies, the SC approach provides better utilization of active and passive components, and is especially favorable when using submicron or deep-submicron CMOS technology because low-voltage devices can be configured in cascaded or hierarchical structures to interface across wide conversion ratios [5].