Comparison of current driven Class-D and Class-E half-wave rectifiers for 6.78 MHz high power IPT applications

Abstract

Two current driven half wave rectifier topologies, Class-D and -E, have been characterised for IPT applications. Both rectifiers utilised SiC Schottky diodes for high power capability. The Class-D topology has reached efficiencies up to 95% and the Class-E up to 90%. Both topologies achieved their highest efficiencies at high voltage operation as the parasitic capacitances of the SiC diodes were affecting the circuit's operation at low voltages.