Characterisation of systematic MOSFET transconductance mismatch

ICMTS 2000. Proceedings of the 2000 International Conference on Microelectronic Test Structures (Cat. No.00CH37095) Pub Date : 2000-03-13 DOI:10.1109/ICMTS.2000.844419

H. Tuinhout

引用次数: 13

Abstract

This paper presents a study on MOSFET transconductance mismatch characterisation using MOSFET pairs with intentional 1% dimensional offsets. Furthermore, a new mismatch phenomenon is introduced that is attributed to mechanical strain associated with CMP dummy tiles.

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系统MOSFET跨导失配的表征

本文介绍了一种利用具有1%尺寸偏移的MOSFET对进行MOSFET跨导失配表征的研究。此外，引入了一种新的错配现象，该现象归因于与CMP假瓷砖相关的机械应变。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

ICMTS 2000. Proceedings of the 2000 International Conference on Microelectronic Test Structures (Cat. No.00CH37095)

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