Bias-Dependent Model of Microwave FET S-parameters Based on Prior Knowledge ANNs

Abstract

The applications of artificial neural networks (ANNs) in bias-dependent modeling of S-parameters of microwave FETs have been proposed earlier. Here, a model based on an ANN with additional prior knowledge at its inputs (PKI ANN) is introduced. S-parameters of the device that belongs to the same class as the modeled device are used as the prior knowledge. The PKI concept allows ANN model to be developed with less training data, which is very advantageous when training data is expensive or time consuming to obtain. The proposed modeling concept is illustrated by an appropriate modeling example