Modeling impact ionization in advanced bipolar transistors for device/circuit simulation

Abstract

Impact ionization in advanced bipolar transistors, which depends on the complex electric-field distribution in the collector, is accounted for in a physical (seminumerical) device model. The collector analysis comprehensively treats quasi-saturation, and thus accounts for the formation of the current-induced space-charge region at high currents as well as the modulation of the junction space-charge region. Simulated (with MMSPICE) and measured characteristics are compared in support of the model.<>