Superior Reliability and Low Self-Heating of a 45nm CMOS 39-GHz Power Amplifier for 5G mmWave Applications

2022 IEEE Radio Frequency Integrated Circuits Symposium (RFIC) Pub Date : 2022-06-19 DOI:10.1109/RFIC54546.2022.9863154

P. Srinivasan, S. Syed, J. A. Sundaram, S. Moss, S. Jain, P. Colestock, N. Cahoon, A. Bandyopadhyay, F. Guarín, B. Min, M. Gall

{"title":"Superior Reliability and Low Self-Heating of a 45nm CMOS 39-GHz Power Amplifier for 5G mmWave Applications","authors":"P. Srinivasan, S. Syed, J. A. Sundaram, S. Moss, S. Jain, P. Colestock, N. Cahoon, A. Bandyopadhyay, F. Guarín, B. Min, M. Gall","doi":"10.1109/RFIC54546.2022.9863154","DOIUrl":null,"url":null,"abstract":"A 5G new-radio (NR) 2-stack differential 39 GHz Power Amplifier (P A) designed with ADNFETs in 45RFSOI technology is used to showcase superior CW and 5G performance and excellent reliability. Measured CW linear gain of ~12 dB, ~18 dBm Psat with P AE of 35.1 % is seen while 5G QPSK results show Plin ~13dBm@-22dB EVM and ~17dBm@-19dB ACPR at 1.7V VDD back-off conditions. Time domain waveforms followed by RF reliability characterization show that off-state Hot Carrier Injection (HCI) is a key fail mechanism under matched-Z load and VSWR. Key RF degradation metrics from long term RF stress show $\\Delta \\mathbf{Pout}, \\Delta \\mathbf{Gain} < 0.5\\mathbf{dBm}$ and $\\Delta \\mathbf{PAR} < 1\\%$ meeting overall 10yr lifetime criteria. Self-heating characterization show ~6 C increase at 1.6V/160mW dissipated power demonstrating excellent thermal stability. From 5G aging measurements and model sims, good model-hardware correlation is seen where gain degradation < 0.5 dB at 10y demonstrating overall superior performance and excellent reliability of the P A for 5G mm Wave applications.","PeriodicalId":415294,"journal":{"name":"2022 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)","volume":"44 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2022-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2022 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RFIC54546.2022.9863154","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 1

Abstract

A 5G new-radio (NR) 2-stack differential 39 GHz Power Amplifier (P A) designed with ADNFETs in 45RFSOI technology is used to showcase superior CW and 5G performance and excellent reliability. Measured CW linear gain of ~12 dB, ~18 dBm Psat with P AE of 35.1 % is seen while 5G QPSK results show Plin ~13dBm@-22dB EVM and ~17dBm@-19dB ACPR at 1.7V VDD back-off conditions. Time domain waveforms followed by RF reliability characterization show that off-state Hot Carrier Injection (HCI) is a key fail mechanism under matched-Z load and VSWR. Key RF degradation metrics from long term RF stress show $\Delta \mathbf{Pout}, \Delta \mathbf{Gain} < 0.5\mathbf{dBm}$ and $\Delta \mathbf{PAR} < 1\%$ meeting overall 10yr lifetime criteria. Self-heating characterization show ~6 C increase at 1.6V/160mW dissipated power demonstrating excellent thermal stability. From 5G aging measurements and model sims, good model-hardware correlation is seen where gain degradation < 0.5 dB at 10y demonstrating overall superior performance and excellent reliability of the P A for 5G mm Wave applications.

查看原文本刊更多论文

用于5G毫米波应用的45nm CMOS 39-GHz功率放大器的高可靠性和低自热

采用45RFSOI技术的adnfet设计的5G新无线电(NR) 2栈差分39 GHz功率放大器(pa)，展示了卓越的CW和5G性能以及出色的可靠性。测量到的连续波线性增益为~12 dB， ~18 dBm Psat, pae为35.1%，而5G QPSK结果显示，在1.7V VDD退退条件下，EVM和ACPR分别为~13dBm@-22dB和~17dBm@-19dB。时域波形和射频可靠性表征表明，非状态热载流子注入(HCI)是匹配z负载和VSWR下的关键失效机制。长期射频应力的关键射频退化指标显示$\Delta \mathbf{Pout}， \Delta \mathbf{Gain} < 0.5\mathbf{dBm}$和$\Delta \mathbf{PAR} < 1\%$符合总体10年寿命标准。自热特性表明，在1.6V/160mW耗散功率下，自热性能提高了6℃，表现出优异的热稳定性。从5G老化测量和模型模拟中可以看出，在10y时增益衰减< 0.5 dB的情况下，模型与硬件之间存在良好的相关性，这表明了5G毫米波应用中pa的整体性能和可靠性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文求助全文

来源期刊

2022 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)

自引率

0.00%

发文量