{"title":"Bump-less interconnect for next generation system packaging","authors":"T. Suga, K. Otsuka","doi":"10.1109/ECTC.2001.927933","DOIUrl":null,"url":null,"abstract":"A concept of bump-less interconnect for the next generation system packaging was proposed previously. Here the bump-less interconnect is defined as an interconnect of a size below 10 /spl mu/m pitch between chip and substrate, or between chip and chip. Such ultra-fine pitch interconnection will be necessary to realize high speed systems such as chip on chip or 3-D configuration for highly integrated multi-chip system in packaging. Two requirements are considered: Firstly, a transmission structure called stacked-pair line will be adopted in the bus-line in boards, and secondly, the surface activated bonding, SAB, is used to enable such ultra-high dense interconnection. A model, which is called IMSI-model 2000, is presented as an example of high speed CPU-memory.","PeriodicalId":340217,"journal":{"name":"2001 Proceedings. 51st Electronic Components and Technology Conference (Cat. No.01CH37220)","volume":"45 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2001-05-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"27","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2001 Proceedings. 51st Electronic Components and Technology Conference (Cat. No.01CH37220)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ECTC.2001.927933","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 27
Abstract
A concept of bump-less interconnect for the next generation system packaging was proposed previously. Here the bump-less interconnect is defined as an interconnect of a size below 10 /spl mu/m pitch between chip and substrate, or between chip and chip. Such ultra-fine pitch interconnection will be necessary to realize high speed systems such as chip on chip or 3-D configuration for highly integrated multi-chip system in packaging. Two requirements are considered: Firstly, a transmission structure called stacked-pair line will be adopted in the bus-line in boards, and secondly, the surface activated bonding, SAB, is used to enable such ultra-high dense interconnection. A model, which is called IMSI-model 2000, is presented as an example of high speed CPU-memory.