Bump-less interconnect for next generation system packaging

T. Suga, K. Otsuka
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引用次数: 27

Abstract

A concept of bump-less interconnect for the next generation system packaging was proposed previously. Here the bump-less interconnect is defined as an interconnect of a size below 10 /spl mu/m pitch between chip and substrate, or between chip and chip. Such ultra-fine pitch interconnection will be necessary to realize high speed systems such as chip on chip or 3-D configuration for highly integrated multi-chip system in packaging. Two requirements are considered: Firstly, a transmission structure called stacked-pair line will be adopted in the bus-line in boards, and secondly, the surface activated bonding, SAB, is used to enable such ultra-high dense interconnection. A model, which is called IMSI-model 2000, is presented as an example of high speed CPU-memory.
用于下一代系统封装的无碰撞互连
以前提出了下一代系统封装的无碰撞互连概念。此处的无碰撞互连定义为芯片与衬底之间或芯片与芯片之间间距小于10 /spl μ m的互连。这种超细间距互连对于实现芯片上的高速系统或封装中高度集成的多芯片系统的3-D配置是必要的。考虑两个要求:一是在板内母线采用堆叠对线的传输结构,二是采用表面活化键合(SAB)实现这种超高密度互连。本文以高速cpu内存为例,介绍了IMSI-model 2000模型。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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