The radiation firmness of the GaAs-AlGaAs HEMT ohmic contacts

Abstract

The results of investigation of the effect of /spl gamma/-radiation on the GaAs-AlGaAs field-effect transistors ohmic contacts specific contact resistivity are presented. The surface microrelief investigations and their correlation with the ohmic contacts parameters are presented. Investigations were carried out for two structure types subjected to various thermal treatment. It was shown that /spl gamma/-radiation may be used for parameters improvement; the radiation limit was determined.