Design and reliability challenges in nanometer technologies

S. Borkar, T. Karnik, V. De
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引用次数: 240

Abstract

CMOS technology scaling is causing the channel lengths to be sub-wavelength of light. Parameter variation, caused by sub-wavelength lithography, will pose a major challenge for design and reliability of future high performance microprocessors in nanometer technologies. In this paper, we present the impact of these variations on processor functionality, Predictability and reliability. We propose design and CAD solutions for variation tolerance. We conclude this paper with sofi error rate scaling trends and sofl error tolerant circuits for reliabilitv enhancement.
纳米技术的设计和可靠性挑战
CMOS技术的缩放导致通道长度为光的亚波长。亚波长光刻技术引起的参数变化将对未来高性能纳米微处理器的设计和可靠性提出重大挑战。在本文中,我们提出了这些变化对处理器功能,可预测性和可靠性的影响。我们提出设计和CAD解决方案的变化公差。最后给出了sofi错误率缩放趋势和sofi容错电路以提高可靠性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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