Passivation of InSb photodetectors with atomic layer deposited Al2O3

Ailiang Cui, X. Zhu, Zhenming Ji, Peng Wei, Yanqiu Lv
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Abstract

The preparation of surface passivation layers on InSb is essential in the process of device fabrication. An Al2O3 passivation film was deposited on the surface of medium wave InSb film by atomic layer deposition (ALD). A series of variable area photodiode devices with different P/A ratios were fabricated. The performance of the device is characterized at 77K. The effects of ALD Al2O3 and anodic oxidation on the leakage current of diode devices were investigated. The surface leakage current of the passivated photodetectors was reduced by an order of magnitude over the anode sulfidation passivated photodetectors. Moreover, the metal-insulator-semiconductor (MIS) device were developed respectively, and the effects of different films as a dielectric layer on the interfacial characteristics were investigated.
用Al2O3沉积原子层钝化InSb光电探测器
在InSb上制备表面钝化层是器件制造过程中必不可少的环节。采用原子层沉积法(ALD)在中波InSb薄膜表面沉积了一层Al2O3钝化膜。制作了一系列不同P/A比的变面积光电二极管器件。该器件的性能特征为77K。研究了Al2O3和阳极氧化对二极管漏电流的影响。钝化光电探测器的表面漏电流比阳极硫化钝化光电探测器的表面漏电流降低了一个数量级。此外,还分别研制了金属-绝缘体-半导体(MIS)器件,并研究了不同薄膜作为介质层对界面特性的影响。
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