Oxidized characteristics of hydrogenated nanocrystalline silicon

Abstract

The hydrogenated nano-crystalline silicon (nc-Si:H) films are prepared using conventional plasma enhanced chemical-vapor- deposition (PECVD) system and oxidized by plasma and high- temperature treatment which all doped oxygen into nc-Si:H film. The contents of hydrogen and oxygen, the infrared absorption spectra, photo-luminescence (PL) spectra are measured. The PL peak wavelengths blue-shift from 695 nm to 660 nm at 77 K, but there are still no obvious visible PL at room-temperature through oxidized post-processing. The bonded forms of oxygen in nc-Si:H are changed with different oxidized way and their influence on PL spectra are also investigated.