SEE Testing on commercial power MOSFETs

P. Fernandez-Martínez, Athina Papadopoulou, S. Danzeca, G. Foucard, R. García Alía, M. Kastriotou, C. Cazzaniga, Giorgos Tsiligiannis, R. Gaillard
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Abstract

This work compiles the outcome of several irradiation test campaigns, carried out with the aim of studying the susceptibility to hard Single Event Effects (SEE) of various commercial power MOSFET references. Proton, neutron and heavy ion irradiation were performed on the same set of MOSFET references, allowing for a comparison of their respective Single Event Burnout (SEB) and Single Event Gate Rupture (SEGR) sensitiveness under different energy and particle irradiation conditions.
商用功率mosfet的SEE测试
这项工作汇编了几个辐照试验活动的结果,目的是研究各种商业功率MOSFET参考文献对硬单事件效应(SEE)的敏感性。在同一组MOSFET参考材料上进行质子、中子和重离子辐照,以便在不同能量和粒子辐照条件下比较它们各自的单事件烧坏(SEB)和单事件门破裂(SEGR)灵敏度。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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