A high efficiency, 2 V single-supply voltage operation RF front-end MMIC for 1.9 GHz Personal Handy Phone Systems

Abstract

A high efficiency and very low voltage operation MMIC using planar self-aligned gate (SAG) FET has been developed for the 1.9 GHz Japanese Personal Handy Phone System (PHS). The MMIC integrates a power amplifier (PA), a low noise amplifier (LNA), a T/R switch (SW) and a negative voltage generator (NVG). The MMIC exhibited high power added efficiency of 39% at the output power (Pout) of 21.0 dBm, which is the highest efficiency in the 2.0 V single supply voltage operation RF front-end MMIC ever reported.