Structural Parameter Impact on Dual Gate Organic Thin Film Transistors

Abstract

This paper presents the impact of organic semiconductor (OSC) thickness variation from 200nm to 100nm using atlas 2-D device simulator. Its effect on various parameters such as mobility, threshold voltage and subs threshold slope, drain current is analyzed. It is concluded from the results that as the thickness of OSC is varied the performance of dual gate organic thin film transistors (OTFTs) is reduced. It is because of the accumulation of charges in the semiconductor-oxide interface is decreased. Subsequently, effect of channel length is investigated and found that while the channel length is reduced; the resistance of the channel is increased which reduces the drain current. Effect of these changes on the morphology of the device is deeply analyzed. Thus, it is attained from the analysis that increase in the threshold voltage is a negative aspect of the device. Afterwards, to analyze the effect of channel length (L) on performance of device, the L is varied in both side, upper and lower from 25μm to 50μm & 25μm to 5μm with a step size of 10. The significant change in current is observed, whereas very slight change is explored in other parameters, therefore, lower dimension device can be fabricated for further compact circuit application.