Design of low voltage low power dual-band LNA with forward body biasing technique

Abstract

A low voltage, low power dual band Low Noise Amplifier (LNA) is presented in this paper. By employing a forward body bias of the MOSFET and current reuse topology the LNA can be operated at reduced supply voltage and power consumption while maintaining high gain due to its topology. Using 0.18 um CMOS process the LNA is designed at 2.4 GHz and 5.2GHz with 13.1 dB and 14.2 dB voltage gains and 2.9dB and 2.6dB NF respectively with 0.7V supply voltage and 3mW power consumption.