Technology Options for Beyond-CMOS

I. Young
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引用次数: 2

Abstract

CMOS integrated circuit technology for computation is at an inflexion point. Although this is the technology which has enabled the semiconductor industry to make vast progress over the past 30-plus years, it is expected to see challenges going beyond the ten year horizon, particularly from an energy efficiency point of view. Thus it is extremely important for the semiconductor industry to discover a new integrated circuit technology which can carry us to the beyond CMOS era, so that the power-performance of computing can continue to improve. Currently, researchers are exploring novel device concepts and new information tokens as an alternative for CMOS technology. Examples of areas being actively researched are; quantum electronic devices, such as the tunneling field-effect transistor (TFET), and devices based on electron spin and nano-magnetics (spintronics). It is clear that choices will need to be made in the next 10 years to identify viable alternatives for CMOS by 2025. To prioritize and guide the research exploration in materials, devices and circuits, benchmarking methodology and metrics are being used. This talk will give an overview of the beyond CMOS device research horizon and the benchmarking of these devices for computation. A more detailed investigation of circuits based upon some promising beyond-CMOS devices will follow.
超越cmos的技术选择
CMOS集成电路计算技术正处在一个拐点上。虽然这项技术使半导体行业在过去的30多年里取得了巨大的进步,但预计它将面临超过十年的挑战,特别是从能源效率的角度来看。因此,对于半导体行业来说,发现一种新的集成电路技术,将我们带入超越CMOS时代,从而使计算的功耗性能不断提高,是极其重要的。目前,研究人员正在探索新的器件概念和新的信息代币作为CMOS技术的替代品。正在积极研究的领域有:量子电子器件,如隧道场效应晶体管(TFET),以及基于电子自旋和纳米磁学(自旋电子学)的器件。很明显,需要在未来10年做出选择,以便在2025年之前确定CMOS的可行替代品。为了优先考虑和指导材料、器件和电路的研究探索,正在使用基准方法和指标。本讲座将概述超CMOS器件的研究前景和这些器件的计算基准。接下来将对基于一些有前途的超cmos器件的电路进行更详细的研究。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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