MOSFET scalability limits and "new frontier" devices

Abstract

Silicon-based MOSFETs are scalable to gate-lengths around 10 nm but will fall well short of commensurate performance enhancement. High mobility materials and device structures that eliminate the use of doping for electrostatic control will have to be incorporated in future CMOS technologies, along with very low contact resistance processes. New frontier FETs incorporating entirely new transport principles show promise but are still far from practical implementation.