A physically based SPICE model for RRAMs including RTN

Abstract

A circuital application for a three-digit random number generator is presented at the design level based on the stochasticity of Random Telegraph Noise (RTN) signals in Resistive Random Access Memories (RRAM). Experimental devices have been fabricated and measured and a physically based current model has been modified to account for RTN. The comparison of the experimental and modeled data is shown and discussed in detail to prove the accuracy and appropriateness of the RTN modeling process. Finally, the implementation of the noise phenomenon in RRAMs is presented in a circuit simulator (LTSpice).