Non-Split Drain MAGFET

Abstract

This paper presents the design of non-split drain MAGFET for high sensitivity magnetic device. The structure is split drain MAGFET that has no gap between drains so drain is only one drain that has split contacts within a drain. It is proved that MAGFET is not necessary to design by split drain with gap between them. The sensitivity is the highest for non-split drain structure. This study compares sensitivities of the two structures with gap between drains of 3, 2, 1 and $0\ \mu \mathbf{m}$ at 0.25 mA, aspect ratio $\mathbf{L}/\mathbf{W}=1$, which are 0.0326, 0.0389, 0.0481 and 0.0595 T−1, respectively. The relative sensitivities ($\boldsymbol{S}_{\boldsymbol{r}}$) of non-split drain are also highest at other aspect ratios which are 0.0003, 0.0036, 0.0092 and 0.0231 T−1 for $\mathbf{L}/\mathbf{W}=0.2$ and 0.0182, 0.0264, 0.0338 and 0.0479 T−1 for $\mathbf{L}/\mathbf{W}=0.6$, respectively. The non-split drain MAGFET is a new design for highest sensitivity. The non-split drain design is the smart way for high sensitivity MAGFET.