A 41-GHz 19.4-dBm PSATCMOS Doherty Power Amplifier for 5G NR Applications

Abstract

In this paper, a 41-GHz Doherty power amplifier (PA) in a standard 65nm CMOS technology is presented for 5G New Radio (NR) applications. The PA implements transformer-based parallel-combined Doherty structure to enhance the power-added efficiency (PAE). And the tunable 90° hybrid is proposed for out-put phase compensation. This work achieves a saturated output power (PSAT) of 19.4dBm and an OP1dB of 18.6dBm at 41.5GHz under 1-V power supply. The peak PAE and the PAE at 6-dB out-put power back-off (PBO) are 30.4% and 19.2%, respectively. The core chip area is 0.22 mm2with a static power consumption of 76mW.