High Performance E-Band Variable Gain LNA with Image Reject Filter

Abstract

This paper presents a high performance 81-86 GHz low noise amplifier (LNA), designed and implemented in an advanced $0.12 \mu\mathrm{m}$ SiGe technology. The LNA comprises five common-emitter stages and two integrated analog controlled attenuators, embedded in its inter-stage matching networks. The LNA exhibits maximum gain of 24 dB at room temperature and more than 20 dB gain-tuning range. An integrated image reject filter provides more than 30 dB of image rejection. At minimum attenuation the LNA shows 4.5 dB noise figure, and at maximum attenuation the LNA achieves input 1 dB compression point (ICP1dB) of −6.5 dBm. The IC consumes 42 mA from a 1.6 Volts supply.