Stresses in 3C-SiC films grown on Si substrates

C. Jacob, P. Pirouz
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Abstract

C-Sic films were grown epitaxially on Si(OO1) substrates by an atmospheric pressure chemical vapor deposition method. The stresses in the films were determined by Raman spectroscopy and compared to data from load-deflection measurements on similar films. The films are tensile as grown and have a stress of 0.3 GPa, which is lower than the reported values for similar films. A possible explanation for the lower stresses as well as other observed trends is suggested. A. Introduction In order for 3C-Sic films epitaxially grown on Si substrates to be used in devices, it is important that the stresses in the films be well understood and controlled, as these stresses determine the flatness and usability of these wafers, as well as other subsequent device characteristics. These stresses do not arise from the lattice mismatch of 20%, but rather from the thermal mismatch of 8% and other factors. The lattice mismatch is accommodated within the first monolayer by the formation of misfit dislocations. However, the thermal coefficient mismatch cannot be avoided and the stresses develop as the film-substrate system cools down after growth. While a number of explanations have been offered in the past for these stresses in chemical vapor deposition (CVD) grown films (l), there is no clear quantitative explanation that explains all the data. B. Experimental Results The films were grown in an atmospheric pressure CVD (APCVD) reactor and the details of the growth have been previously reported (2). The stresses were measured by micro- Raman spectroscopy and compared with data on films grown in the same reactor and measured by a load-deflection technique (3). The calculations of stress are based on the work of Feng et al. (4). It is well known that stresses cause a shift in the Raman peaks. These stresses can be estimated from the shifts in the LO (longitudinal optical) and TO (transverse optical) phonon positions. The peak positions for the films are tabulated in Table 1. From these values, the stress was determined. A stress of 0.3M0.2 GPa was measured in a 0.3 pm thick film grown in the APCVD reactor at 1360 "C. This value of stress is lower than the values on similar films obtained by the load-deflection technique (3). These films were all grown in the same reactor under identical conditions. The resolution of the micro-Raman measurements was lower than that of the load deflection technique and that could explain the higher stress value measured by Raman spectroscopy. It has already been established in the SiC/Si system, that there are no stresses due to the film-substrate lattice mismatch, because of the presence of misfit dislocations with the appropriate spacing at the interface. Thus, any residual stresses are due to the thermal mismatch and other intrinsic stresses. The thermal mismatch stresses (of) can be calculated for each film orientation, using
在Si衬底上生长的3C-SiC薄膜中的应力
采用常压化学气相沉积法在Si(OO1)衬底上外延生长C-Sic薄膜。薄膜中的应力由拉曼光谱测定,并与类似薄膜的负载挠度测量数据进行比较。薄膜在生长过程中具有拉伸性,应力为0.3 GPa,低于同类薄膜的报道值。对较低的应力以及其他观察到的趋势提出了一个可能的解释。为了使在Si衬底上外延生长的3C-Sic薄膜用于器件,很重要的一点是薄膜中的应力得到很好的理解和控制,因为这些应力决定了这些晶圆的平面度和可用性,以及其他后续器件特性。这些应力不是由20%的晶格失配引起的,而是由8%的热失配和其他因素引起的。晶格错配通过错配位错的形成在第一单层内调节。然而,热系数不匹配是不可避免的,并且随着薄膜-衬底系统在生长后冷却而产生应力。虽然过去对化学气相沉积(CVD)生长薄膜中的这些应力提供了许多解释(1),但没有明确的定量解释可以解释所有数据。B.实验结果薄膜是在常压CVD (APCVD)反应器中生长的,生长的细节之前已经报道过(2)。应力是通过微拉曼光谱测量的,并与在同一反应器中生长的薄膜的数据进行了比较,并通过负载偏转技术进行了测量(3)。应力的计算基于Feng等人的工作(4)。众所周知,应力会导致拉曼峰的移动。这些应力可以从LO(纵向光学)和TO(横向光学)声子位置的位移来估计。薄膜的峰值位置如表1所示。根据这些值,确定了应力。在1360℃下,在APCVD反应器中生长的0.3 pm厚的薄膜中测量到0.3 m0.2 GPa的应力,该应力值低于通过负载-偏转技术获得的类似薄膜的应力值(3)。这些薄膜都是在相同的反应器中在相同的条件下生长的。微拉曼测量的分辨率低于负载偏转技术,这可以解释拉曼光谱测量的应力值较高的原因。在SiC/Si体系中已经确定,由于在界面处存在适当间距的错配位错,因此不会由于薄膜-衬底晶格错配而产生应力。因此,任何残余应力都是由于热失配和其他固有应力。的热失配应力可以计算每个薄膜方向,使用
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