A 10-bit 100-MS/s 2b/cycle-assisted SAR ADC in 180nm CMOS

Yung-Hui Chung, Hua-Wei Tseng
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引用次数: 4

Abstract

This paper presents a 10-bit 100-MS/s 2b/cycle-assisted SAR ADC in a 180nm CMOS technology. The proposed 2b/cycle-assisted architecture can effectively speed up ADC operation and improve the ADC linearity. To maintain a small capacitor mismatch, dual-reference C-DACs are proposed to avoid using a tiny unit capacitance. At 100-MS/s, it consumes 6.45 mW from a 1.8-V supply. Measured Nyquist SNDR and SFDR are 52.3 and 71 dB, respectively. Measured ENOB is 8.4 bits, equivalent to a FoM of 191 fJ/conversion-step.
基于180nm CMOS的10位100 ms /s 2b/周期辅助SAR ADC
本文提出了一种采用180nm CMOS技术的10位100毫秒/秒2b/周期辅助SAR ADC。所提出的2b/周期辅助架构可以有效加快ADC的运算速度,提高ADC的线性度。为了保持小的电容失配,建议采用双基准c - dac来避免使用微小的单位电容。在100 ms /s时,它从1.8 v电源消耗6.45 mW。Nyquist SNDR和SFDR测量值分别为52.3和71 dB。测量的ENOB为8.4位,相当于191 fJ/转换步长的FoM。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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