Feedback Redundancy: A Power Efficient SEU-Tolerant Latch Design for Deep Sub-Micron Technologies

M. Fazeli, A. Patooghy, S. Miremadi, A. Ejlali
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引用次数: 72

Abstract

The continuous decrease in CMOS technology feature size increases the susceptibility of such circuits to single event upsets (SEU) caused by the impact of particle strikes on system flip flops. This paper presents a novel SEU-tolerant latch where redundant feedback lines are used to mask the effects of SEUs. The power dissipation, area, reliability, and propagation delay of the presented SEU-tolerant latch are analyzed by SPICE simulations. The results show that this latch consumes about 50% less power and occupies 42% less area than a TMR-latch. However, the reliability and the propagation delay of the proposed latch are still the same as the TMR-latch. the reliability of the proposed latch is also compared with other SEU-tolerant latches.
反馈冗余:用于深亚微米技术的高能效容错锁存器设计
CMOS技术特征尺寸的不断减小增加了这种电路对单事件扰流(SEU)的敏感性,这是由于粒子撞击对系统触发器的影响造成的。本文提出了一种新的容错锁存器,该锁存器采用冗余反馈线来掩盖容错锁存器的影响。通过SPICE仿真分析了该锁存器的功耗、面积、可靠性和传播延迟。结果表明,该锁存器的功耗比tmr锁存器低50%,占用的面积比tmr锁存器小42%。然而,该锁存器的可靠性和传播延迟仍然与tmr锁存器相同。该锁存器的可靠性也与其他容错锁存器进行了比较。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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