5G mmWave Power Amplifier and Low-Noise Amplifier in 300mm GaN-on-Si Technology

2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) Pub Date : 2022-06-12 DOI:10.1109/vlsitechnologyandcir46769.2022.9830383

Q. Yu, H. Then, D. Thomson, Jessica C. Chou, Jeffrey Garrett, I-Lun Huang, I. Momson, Surej Ravikumar, Seahee Hwangbo, A. Latorre-Rey, Ananda Roy, M. Radosavljevic, M. Beumer, P. Koirala, N. Thomas, N. Nair, H. Vora, S. Bader, J. Rode, J. Jensen, S. Rami

引用次数: 6

Abstract

This paper presents fully integrated power amplifier (PA) and low-noise amplifier (LNA) targeting 5G mmWave band n260 (37GHz-40GHz) in 300mm GaN-on-Si technology. At 39.5GHz, the PA achieves measured Psat, peak PAE, linear gain, and OP1dB of 25dBm, 38.8%, 24.8dB, and 19.8dBm, occupying only 0.079mm2. The LNA achieves 24.6dB gain, 2.9dB noise figure, and -11.4dBm IIP3 at 38GHz. Both circuits are compact and viable candidates for phased arrays in mobile devices. This is industry’s first demonstration of mmWave circuits in 300mm GaN-on-Si technology.

查看原文本刊更多论文

5G毫米波功率放大器和300mm GaN-on-Si技术的低噪声放大器

本文提出了一种基于300mm GaN-on-Si技术的5G毫米波n260 (37GHz-40GHz)全集成功率放大器(PA)和低噪声放大器(LNA)。在39.5GHz时，测得的Psat、峰值PAE、线性增益和OP1dB分别为25dBm、38.8%、24.8dB和19.8dBm，仅占用0.079mm2。该LNA在38GHz时可实现24.6dB增益、2.9dB噪声系数和-11.4dBm IIP3。这两种电路都是紧凑且可行的移动设备相控阵候选电路。这是业界首次在300mm GaN-on-Si技术中演示毫米波电路。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文求助全文

来源期刊

2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)

自引率

0.00%

发文量