Light emitting diodes with extremely high extraction-efficiency for electroluminescence refrigeration

2007 Quantum Electronics and Laser Science Conference Pub Date : 2007-05-06 DOI:10.1109/QELS.2007.4431445

S. Yu, N. Rider, D. Ding, J. Wang, S. Johnson, Y. Zhang

引用次数: 1

Abstract

InGaAs light emitting diodes with extremely high light extraction efficiency are fabricated by monolithically integrating the light emitting region with a suspended GaAs hemispherical lens. This design is being developed for electroluminescence refrigeration applications.

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具有极高萃取效率的发光二极管，用于电致发光制冷

通过将发光区域与悬浮的砷化镓半球面透镜单片集成，制备出具有极高光提取效率的InGaAs发光二极管。这种设计正在开发用于电致发光制冷应用。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2007 Quantum Electronics and Laser Science Conference

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