Capabilities of image sensors with a photonic avalanche diode

Abstract

In many fields of science and technology there is a need to record fast running processes and phenomena, often occurring in low light conditions. In such cases, there is a need to use highly sensitive image sensors. Such sensors can be constructed on the basis of photon avalanche diodes capable of capturing even single photons. However, creating this type of sensor with high performance, in particular, with high resolution, presents a number of technological challenges, as they are more complex than traditional CMOS (Complementary Metal–Oxide–Semiconductor) and CCD (Charge-Coupled Device) sensors. Using recent advances and new circuitry, Canon created the first megapixel image sensor with a photon avalanche diode (Single Photon Avalanche Diode, SPAD). In this article, in addition to general issues related to image sensors with photon avalanche diode, the design, operation, characteristics, features and possible applications of Canon’s SPAD megapixel sensor are discussed. In particular, the methods of photon counting and time-of-flight are discussed, as well as the dynamic range of the sensor, the possibilities of sensor application for imaging in the infrared range, and the prospects for wide application of SPAD sensors in the near future. As a result, it can be noted that in addition to direct use for obtaining high-quality 2D-images of fast processes running in low light conditions, such a sensor can be used for taking images in the infrared range, to obtain 3D-images for xReality, measuring the distance to objects, obtaining a depth map, as well as in areas of science and technology that are new for such devices, including, for example, quantum computing.