Millimetre-wave InGaAs/InP heterojunction bipolar phototransistors

Abstract

InGaAs/InP heterojunction phototransistors are described which have a dc gain of several thousand and a frequency response that shows higher output power than optimised photodiodes at 40 GHz. This is accomplished as a result of the two-terminal, edge-coupled design approach, which allows small area devices to be fabricated with low parasitics and efficient optical access.