Tungsten as an Interconnect Material for NextGeneration IC Design

K. Ganesh, Vilas H. Gaidhane
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引用次数: 1

Abstract

Over the last few decades, technology have seamlessly transfer from Aluminium to Copper, as aluminium has deemed as an unsuitable metal when it is in the nanoscale due to associated drawbacks. Although with the challenge of having to replace copper, it has been one of the most consistent materials in the wire dimension area. However, getting a material as ideal as copper is proving to be more inefficient as scale down the wire deeper. There has been a spurt in the research of Tungsten (W) and its Oxides (WOx) as a potential replacement to the issues posed by copper. In general, tungsten has been proven to be superior to most existing interconnect materials and has been only put behind Silver and Copper. However, as technology reach the nanoscale, there has been increasing studies on how to fabricate tungsten and its subsidiaries as an alternate to other materials. The purpose of this research is to study Tungsten and other existing interconnect materials and compare them on theoretical and observational basis. The number of simulations has been carried out using the COMSOL software in various environments in order to see how tungsten behaves in all environments and propose whether it is suitable in the upcoming generation of ICs and beyond.
钨作为下一代集成电路设计的互连材料
在过去的几十年里,技术已经无缝地从铝转移到铜,因为由于相关的缺点,铝在纳米尺度上被认为是一种不合适的金属。尽管面临着必须取代铜的挑战,但它一直是线材尺寸领域最一致的材料之一。然而,获得像铜一样理想的材料被证明是更低效率的,因为电线越细越深。钨(W)及其氧化物(WOx)作为铜的潜在替代品的研究出现了井喷式增长。总的来说,钨已被证明优于大多数现有的互连材料,仅次于银和铜。然而,随着技术达到纳米级,人们越来越多地研究如何制造钨及其附属材料作为其他材料的替代品。本研究的目的是研究钨和其他现有的互连材料,并在理论和观测的基础上进行比较。使用COMSOL软件在各种环境中进行了多次模拟,以了解钨在所有环境中的行为,并提出它是否适用于即将到来的下一代ic及以后的ic。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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