1.8 mΩcm2, 10 A Power MOSFET in 4H-SiC

Abstract

The power MOSFET on 4H-SiC is an attractive high-speed and low-dissipation power switching device. The problem to be solved before realizing the 4H-SiC power MOSFET with low on-resistance is low channel mobility at the SiO2/SiC interface. This work has succeeded in increasing the channel mobility in the buried channel IEMOSFET on carbon-face substrate, and has achieved an extremely low on-resistance of 1.8 mΩcm2 with a blocking voltage of 660 V