A 1.25W 46.5%-Peak-Efficiency Transformer-in-Package Isolated DC-DC Converter Using Glass-Based Fan-Out Wafer-Level Packaging Achieving 50mW/mm2 Power Density

Dongfang Pan, Guolong Li, Fangting Miao, Biao Deng, Junying Wei, Daquan Yu, Ming Liu, Lin Cheng
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引用次数: 4

Abstract

Power delivering with galvanic isolation is essential to guarantee system safety and reliability in harsh industry environments. However, efficiently transferring power of hundreds of mW across an isolation barrier is challenging for such size- and costconstrained applications. Isolated capacitive power transfer using on-chip capacitors and an off-chip inductor is demonstrated in [1], but it only delivers 62mW power with less1 kV isolation voltage that is limited by the on-chip capacitors. To increase the output power and the isolation voltage, isolated DC-DC converters using silicon-based postprocessed micro-transformers have been reported recently [2] –[4]. In [2], 6-$\mu \mathrm{m}$-thick plated Au are used for both the primary and the secondary coil windings to achieve quality factors of 6.8 at 200MHz, while the efficiency of the converter is lower than 34% with a maximum output power of 0.8W. A performance-enhanced micro-transformer using a magnetic core is proposed in [3] to achieve a peak efficiency of 52% and a maximum output power of 1.1W. However, the fabrication process of such a transformer is complex and the cost is high. In [4], the micro-transformer is formed by using ultrathick metal windings, and high inductances with high quality factors are achieved to allow the converter to switch at 11MHz. However, the topology proposed produces large resonant currents that flow into the coils, degrading the efficiency to 34% with only 165mW output power. Moreover, the abovementioned isolated converters are assembled in a small-outline integrated-circuit (SOIC) 8-lead [2] or 28-lead [3] packages that measure 6mm $\times 10$ mm or 10mm $\times 18$ mm, respectively, resulting in a maximum power density of only 13.33mW/mm2.
采用玻璃基扇出晶圆级封装实现50mW/mm2功率密度的1.25W 46.5%峰值效率封装变压器隔离DC-DC变换器
在恶劣的工业环境中,电流隔离供电是保证系统安全性和可靠性的必要条件。然而,对于这种尺寸和成本有限的应用来说,通过隔离屏障有效地传输数百兆瓦的功率是一项挑战。在[1]中演示了使用片上电容器和片外电感的隔离电容功率传输,但由于片上电容器的限制,隔离电压小于1 kV,只能提供62mW的功率。为了提高输出功率和隔离电压,最近报道了采用硅基后处理微变压器的隔离DC-DC变换器[2]-[4]。在[2]中,初级和次级线圈绕组均采用6-$\mu \ mathm {m}$厚的镀Au,在200MHz时质量因数达到6.8,而变换器的效率低于34%,最大输出功率为0.8W。[3]提出了一种使用磁芯的性能增强型微型变压器,峰值效率为52%,最大输出功率为1.1W。然而,这种变压器的制造工艺复杂,成本高。在[4]中,采用超厚金属绕组形成微型变压器,实现了高电感和高质量因数,使变换器能够在11MHz切换。然而,所提出的拓扑结构会产生流入线圈的大谐振电流,使效率降低到34%,而输出功率只有165mW。此外,上述隔离转换器组装在小轮廓集成电路(SOIC) 8引脚[2]或28引脚[3]封装中,分别测量6mm × 10mm或10mm × 18 mm,导致最大功率密度仅为13.33mW/mm2。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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