Dark current mechanisms in InxGa1-xAs1-yNy

Abstract

In order to extend the photo response of GaAs to optical telecommunication wavelengths, In and N can be incorporated into GaAs to yield a perfect lattice match of In_xGa_1-xAs_1-yN_y with GaAs with a bandgap that strongly decreases with increasing N composition. The potential usage of such a material as photodetectors and photovoltaic applications has been reported.In this work, we investigate the dark current mechanisms in the In_xGa_1-xAs_1-yN_y material.