Dielectric Losses of Microwave Ceramics Based on Crystal Structure

H. Ohsato, J. Varghese, H. Jantunen
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引用次数: 8

Abstract

So far, many microwave dielectric materials have been investigated for a range of telecommunication applications. In dielectrics, the three main dielectric properties are quality factor ( Q ), dielectric constant and temperature coefficient of resonant frequency. Among these, the most essential dielectric property is Q . More specifi-cally, Q is the inverse of the dielectric loss (tan δ ); thus Q = 1/tan δ . There are two kinds of losses: those depending on crystal structure and losses due to external factors. The former is intrinsic losses such as ordering, symmetry, and phonon vibration. The latter is extrinsic losses due to factors such as grain size, defects, inclusions and distortion. In this chapter, the authors present the origin of dielectric losses based on the crystal structure. An ideal and well-proportional crystal structure constitutes a low loss material. Most dielectric materials are paraelectrics with inversion symmetry i and high symmetry. In general, it is believed that ordering gives rise to a high Q , on which many researchers are casting doubt. In the case of complex perovskites, the symmetry changes from cubic to trigonal. Ordering and symmetry should be compared with the structure. In this chapter, three essential conditions for the origin of high Q such as high symmetry, compositional ordering and compositional density are presented.
基于晶体结构的微波陶瓷介电损耗
到目前为止,许多微波介电材料已经被研究用于一系列的电信应用。在电介质中,三个主要的介电特性是质量因子Q、介电常数和谐振频率温度系数。其中,最基本的介电性能是Q。更具体地说,Q是介电损耗(tan δ)的倒数;因此Q = 1/tan δ。损耗有两种:由晶体结构引起的损耗和由外部因素引起的损耗。前者是固有损耗,如有序、对称和声子振动。后者是由于晶粒尺寸、缺陷、夹杂物和变形等因素造成的外在损失。在本章中,作者提出了基于晶体结构的介电损耗的来源。理想且比例良好的晶体结构构成了低损耗材料。大多数介电材料是具有逆对称i和高对称性的准电性材料。一般来说,人们认为排序会产生高Q值,但许多研究人员对此表示怀疑。在复杂钙钛矿的情况下,对称性从立方体变为三角形。有序和对称应该与结构相比较。在这一章中,给出了高Q起源的三个必要条件:高对称性、组成有序性和组成密度。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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