Analysis and Design of Dual-Peak Gmax-Core CMOS Amplifier in D-Band Embedding a T-Shaped Network

Abstract

In order to overcome the performance limitation of CMOS technology at high frequencies above 100 GHz, the concept of maximum achievable gain (Gmax) with an embedding network has been investigated. In this work, a novel Gmax-core embedding a T-shaped gain-boosting network that provides two Gmax-peaks is analyzed and demonstrated in the D-band with a 28-nm FD-SOI CMOS process. With the proposed topology, one can design the peak Gmax frequencies and in/output impedances simultaneously as desired for high gain and broadband operation. The fabricated amplifier offers a peak small-signal gain and bandwidth of 14.5 dB and 26 GHz, respectively, with power consumption of 21.6 mW in 117 - 143 GHz.