{"title":"An area efficient low power high speed S-Box implementation using power-gated PLA","authors":"Ho Joon Lee, Yong-Bin Kim","doi":"10.1145/2591513.2591575","DOIUrl":null,"url":null,"abstract":"Advanced Encryption Standard (AES) is one of the most common symmetric encryption algorithms. The hardware complexity in AES is dominated by AES substitution box (S-Box), which is considered as one of the most complicated and costly part of the system because it is the only non-linear structure. This paper presents a low power design of Rijndael S-Box for the SubByte transformation using power-gating and PLA design techniques to reduce area and leakage power during stand-by mode. The proposed design is implemented using 110nm standard CMOS process with 1.2V power supply. The proposed design reduces the total leakage power and the total transistor count to 10% and 50% of the conventional design, respectively while improving the speed performance by ten times.","PeriodicalId":272619,"journal":{"name":"ACM Great Lakes Symposium on VLSI","volume":"97 6 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-05-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"ACM Great Lakes Symposium on VLSI","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1145/2591513.2591575","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Advanced Encryption Standard (AES) is one of the most common symmetric encryption algorithms. The hardware complexity in AES is dominated by AES substitution box (S-Box), which is considered as one of the most complicated and costly part of the system because it is the only non-linear structure. This paper presents a low power design of Rijndael S-Box for the SubByte transformation using power-gating and PLA design techniques to reduce area and leakage power during stand-by mode. The proposed design is implemented using 110nm standard CMOS process with 1.2V power supply. The proposed design reduces the total leakage power and the total transistor count to 10% and 50% of the conventional design, respectively while improving the speed performance by ten times.